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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1170
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *High DC Current Gain: hFE= 2000( Min.) @(IC= 3A, VCE= 2V) *Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 3mA)
B
APPLICATIONS *Driver for solenoid,motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
scs .i w
VALUE 120 V 120 V 6 V 6 A 10 A 1 A
UNIT
.cn mi e
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature
PC
50
W
TJ
150
Tstg
Storage Temperature
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1170
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
120
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 3mA
B
1.5
V
VBE(sat) ICBO IEBO
Base-Emitter Saturation Voltage
IC= 3A; IB= 3mA
B
2.0
V A A
Collector Cutoff Current
VCB= 120V; IE= 0 VEB= 6V; IC= 0
10
Emitter Cutoff Current
10
hFE
DC Current Gain
IC= 3A; VCE= 2V
COB
Output Capacitance
fT
Current-Gain--Bandwidth Product
Switching Times
ton tstg tf
Turn-on Time
Storage Time
ww w
scs .i
IE= 0; VCB= 10V; ftest= 1MHz
IE= -1A; VCE= 12V
.cn mi e
2000
70
pF
50
MHz
0.5
s s s
VCC= 30V, RL= 10, IC= 3A; IB1= -IB2= 3mA,
5.5
Fall Time
1.5
isc Websitewww.iscsemi.cn
2


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